Pulsed Drain Current-Max (IDM) 14.6A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.6Ohm
Max Dual Supply Voltage 600V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7.3A
Turn-Off Delay Time 170 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 25V
Halogen Free Not Halogen Free
Vgs(th) (Max) @ Id 5.5V @ 350μA
Rds On (Max) @ Id, Vgs 600m Ω @ 4.6A, 10V
Turn On Delay Time 120 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 83W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ