SPP03N60C3HKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 3.2A TO-220AB
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 100 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 9.6A
Drain Current-Max (Abs) (ID) 3.2A
JEDEC-95 Code TO-220AB
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Vgs(th) (Max) @ Id 3.9V @ 135μA
Rds On (Max) @ Id, Vgs 1.4 Ω @ 2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 38W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series CoolMOS?
Published 2005
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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