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Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 0.7A SOT-223
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series CoolMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature HIGH VOLTAGE
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 700mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5.5V @ 135μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 700mA Ta
Gate Charge (Qg) (Max) @ Vgs 12.8nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 700mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.7A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 3A
Avalanche Energy Rating (Eas) 100 mJ

Dimensions

Height 1.6mm
Length 6.5mm
Width 3.5mm

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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