SPN02N60S5
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 0.4A SOT-223
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 50 mJ
Pulsed Drain Current-Max (IDM) 2.2A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 3Ohm
Drain Current-Max (Abs) (ID) 0.4A
Gate to Source Voltage (Vgs) 3.5V
Continuous Drain Current (ID) 400mA
Turn-Off Delay Time 110 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 400mA Ta
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 80μA
Rds On (Max) @ Id, Vgs 3 Ω @ 1.1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 1.8W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.8W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 400mA
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Subcategory FET General Purpose Power
HTS Code 8541.29.00.95
Additional Feature HIGH VOLTAGE
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series CoolMOS?
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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