SPN02N60C3 E6433
RoHS
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Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 0.4A SOT-223
PDF
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Buying Options
Total Price: USD $0.27
Unit Price: USD $0.26885
≥1 USD $0.26885
≥10 USD $0.2204
≥100 USD $0.21375
≥500 USD $0.2071
≥1000 USD $0.20045
Inventory: 1072
Minimum: 1
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Technical Details
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 400mA Ta
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Vgs(th) (Max) @ Id 3.9V @ 80μA
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.1A, 10V
FET Type N-Channel
Power Dissipation-Max 1.8W Ta
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series CoolMOS?
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Alternative Model
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