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SPD25N06S2-40

Infineon Technologies
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 29A DPAK
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Inventory: 8548
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series OptiMOS?
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 29A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 26μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 29A
Drain Current-Max (Abs) (ID) 25A
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 116A
Avalanche Energy Rating (Eas) 80 mJ

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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