Avalanche Energy Rating (Eas) 70 mJ
Pulsed Drain Current-Max (IDM) 38.8A
Drain to Source Breakdown Voltage -60V
Drain-source On Resistance-Max 0.25Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9.7A
Turn-Off Delay Time 49 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9.7A Tc
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 250m Ω @ 6.8A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 42W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ