Avalanche Energy Rating (Eas) 230 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 21.9A
Drain-source On Resistance-Max 0.6Ohm
Drain Current-Max (Abs) (ID) 7.3A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V
Vgs(th) (Max) @ Id 3.9V @ 350μA
Rds On (Max) @ Id, Vgs 600m Ω @ 4.6A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 83W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ