Drain Current-Max (Abs) (ID) 4A
Max Dual Supply Voltage 800V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 72 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 25V
Vgs(th) (Max) @ Id 3.9V @ 240μA
Rds On (Max) @ Id, Vgs 1.3 Ω @ 2.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 63W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ