Avalanche Energy Rating (Eas) 824 mJ
Pulsed Drain Current-Max (IDM) 320A
Drain-source On Resistance-Max 0.023Ohm
Continuous Drain Current (ID) 80A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 173nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 5033pF @ 25V
Vgs(th) (Max) @ Id 4V @ 5.5mA
Rds On (Max) @ Id, Vgs 23m Ω @ 64A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 340W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ