SPB80N10L
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 80A D2PAK
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 700 mJ
Pulsed Drain Current-Max (IDM) 320A
Drain-source On Resistance-Max 0.024Ohm
Continuous Drain Current (ID) 80A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 4540pF @ 25V
Vgs(th) (Max) @ Id 2V @ 2mA
Rds On (Max) @ Id, Vgs 14m Ω @ 58A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 250W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 80A
Peak Reflow Temperature (Cel) 220
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 100V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series SIPMOS?
Published 2002
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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