Avalanche Energy Rating (Eas) 660 mJ
Pulsed Drain Current-Max (IDM) 320A
Drain-source On Resistance-Max 0.004Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 148nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 5890pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 4m Ω @ 80A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 300W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ