SPB21N10
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 21A D2PAK
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Technical Details
Technical
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Series SIPMOS?
Published 2002
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Avalanche Energy Rating (Eas) 130 mJ
Pulsed Drain Current-Max (IDM) 84A
Drain-source On Resistance-Max 0.08Ohm
Continuous Drain Current (ID) 21A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 38.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Input Capacitance (Ciss) (Max) @ Vds 865pF @ 25V
Vgs(th) (Max) @ Id 4V @ 44μA
Rds On (Max) @ Id, Vgs 80m Ω @ 15A, 10V
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 90W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 21A
Peak Reflow Temperature (Cel) 220
Terminal Form GULL WING
Physical
Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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