Max Junction Temperature (Tj) 175°C
Pulsed Drain Current-Max (IDM) 74.8A
Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -18.7A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18.7A Ta
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 130m Ω @ 13.2A, 10V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 81.1W Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ