Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 47A
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 5V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 22m Ω @ 25A, 10V
Power Dissipation-Max 3.8W Ta 110W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ