IRLU024N
RoHS
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Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 17A I-PAK
PDF
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Buying Options
Total Price: USD $0.33
Unit Price: USD $0.3306
≥1 USD $0.3306
≥10 USD $0.2717
≥100 USD $0.26315
≥500 USD $0.2546
≥1000 USD $0.24605
≥1000 USD $0.2204
Inventory: 118587
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 68 mJ
DS Breakdown Voltage-Min 55V
Pulsed Drain Current-Max (IDM) 72A
Drain-source On Resistance-Max 0.08Ohm
Drain Current-Max (Abs) (ID) 17A
Vgs (Max) ±16V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 55V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 65m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 45W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series HEXFET?
Published 2000
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Alternative Model
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