IRLTS2242TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 6.9A 6TSOP
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Buying Options
Total Price: USD $0.39
Unit Price: USD $0.3872
≥1 USD $0.3872
≥10 USD $0.32736
≥100 USD $0.227392
≥500 USD $0.177531
≥1000 USD $0.144302
Inventory: 37935
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 55MOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5.8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 6.9A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 905pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 18 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 68 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 6.9A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 55A
Dimensions
Height 1.3mm
Length 3mm
Width 1.75mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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