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IRLSL3036PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 195A TO262
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Buying Options
Total Price: USD $10.17
Unit Price: USD $10.16785
≥1 USD $10.16785
≥10 USD $8.3429
≥100 USD $8.0826
≥500 USD $7.82135
≥1000 USD $7.56105
Inventory: 1265
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.4MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation-Max 380W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection DRAIN
Turn On Delay Time 66 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 165A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11210pF @ 50V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Rise Time 220 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 270A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 290 mJ

Dimensions

Height 9.652mm
Length 10.668mm
Width 4.826mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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