IRLS3813PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 160A D2PAK
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Buying Options
Total Price: USD $13.42
Unit Price: USD $13.42445
≥1 USD $13.42445
≥10 USD $11.01525
≥100 USD $10.6704
≥500 USD $10.3265
≥1000 USD $9.9826
Inventory: 1098
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 850A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 160A
Turn-Off Delay Time 33 ns
Fall Time (Typ) 102 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 202ns
Gate Charge (Qg) (Max) @ Vgs 83nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Input Capacitance (Ciss) (Max) @ Vds 8020pF @ 25V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Rds On (Max) @ Id, Vgs 1.95m Ω @ 148A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 32 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 195W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code R-PSSO-G2
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Resistance 1.95Ohm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Series HEXFET?
Published 2014
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 3.949996g
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 15 Weeks
Alternative Model
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