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IRLR024ZTRPBF

Infineon Technologies
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 16A DPAK
PDF
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.6916
≥1 USD $0.6916
≥10 USD $0.5681
≥100 USD $0.55005
≥500 USD $0.532
≥1000 USD $0.5149
Inventory: 1268
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Power Dissipation 35W
Turn On Delay Time 8.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 58mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 9.9nC @ 5V
Rise Time 43ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 16mA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Input Capacitance 380pF
Drain to Source Resistance 58mOhm
Rds On Max 58 mΩ

Dimensions

Height 2.38mm
Length 6.7056mm
Width 6.22mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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