Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) -2.4A
Turn-Off Delay Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 15V
Vgs(th) (Max) @ Id 700mV @ 250μA
Rds On (Max) @ Id, Vgs 200m Ω @ 1.6A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.7W Ta
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ