Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 6.5A
Turn-Off Delay Time 36 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 30m Ω @ 6.5A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 8.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2W Ta
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ