IRLML2502TR
RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 4.2A SOT-23
PDF
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Buying Options
Total Price: USD $0.08
Unit Price: USD $0.08075
≥1 USD $0.08075
≥10 USD $0.0665
≥100 USD $0.0646
≥500 USD $0.0627
≥1000 USD $0.05985
Inventory: 253595
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Power Dissipation-Max (Abs) 1.25W
DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 33A
Drain-source On Resistance-Max 0.045Ohm
Drain Current-Max (Abs) (ID) 4.2A
JEDEC-95 Code TO-236AB
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 15V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 45m Ω @ 4.2A, 4.5V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G3
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
JESD-609 Code e3
Series HEXFET?
Published 2003
Packaging Cut Tape (CT)
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Alternative Model
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