Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 6.5A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 4.6A
Turn-Off Delay Time 33 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 31m Ω @ 4.6A, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ