IRLL2703
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 3.9A SOT223
PDF
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Inventory: 16938
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series HEXFET?
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.9A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 5.5A
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 16A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 180 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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