Drain to Source Breakdown Voltage 55V
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 140m Ω @ 2A, 10V
Transistor Application SWITCHING
Turn On Delay Time 5.1 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ