IRLI540N
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 23A TO220FP
PDF
/
Buying Options
Total Price: USD $5.37
Unit Price: USD $5.37035
≥1 USD $5.37035
≥10 USD $4.4061
≥100 USD $4.26835
≥500 USD $4.1306
≥1000 USD $3.99285
Inventory: 601
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 54W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.053Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 310 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
Recommended For You
IRLI540N+price,IRLI540N+datasheet,IRLI540N+in stock,buy+IRLI540N,finder+IRLI540N,IRLI540N+tutorials,IRLI540N+download