IRLHM620TR2PBF
RoHS
/
Package 8-VQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 26A PQFN
PDF
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Buying Options
Total Price: USD $7.2
Unit Price: USD $7.2029
≥1 USD $7.2029
≥10 USD $5.90995
≥100 USD $5.72565
≥500 USD $5.5404
≥1000 USD $5.3561
Inventory: 1313
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 3.3mm
Length 3.2766mm
Height 900μm
Technical
Nominal Vgs 800 mV
Rds On Max 2.5 mΩ
Drain to Source Resistance 1.8mOhm
Max Junction Temperature (Tj) 150°C
Recovery Time 62 ns
Input Capacitance 3.62nF
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 12V
Threshold Voltage 800mV
Continuous Drain Current (ID) 26A
Turn-Off Delay Time 57 ns
Fall Time (Typ) 37 ns
Drain to Source Voltage (Vdss) 20V
Rise Time 25ns
Gate Charge (Qg) (Max) @ Vgs 78nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 26A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 3620pF @ 10V
Vgs(th) (Max) @ Id 1.1V @ 50μA
Rds On (Max) @ Id, Vgs 2.5mOhm @ 20A, 4.5V
FET Type N-Channel
Turn On Delay Time 7.5 ns
Power Dissipation 2.7W
Number of Channels 1
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 2.7W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Cut Tape (CT)
Physical
Supplier Device Package PQFN (3x3)
Number of Pins 8
Package / Case 8-VQFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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