IRLH5030TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 13A 8PQFN
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.15mm
Length 6.1468mm
Height 990.6μm
Technical
Nominal Vgs 2.5 V
Rds On Max 9 mΩ
Drain to Source Resistance 9.9mOhm
Recovery Time 48 ns
Input Capacitance 5.185nF
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 16V
Threshold Voltage 2.5V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 41 ns
Fall Time (Typ) 41 ns
Drain to Source Voltage (Vdss) 100V
Rise Time 72ns
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 5185pF @ 50V
Vgs(th) (Max) @ Id 2.5V @ 150μA
Rds On (Max) @ Id, Vgs 9mOhm @ 50A, 10V
FET Type N-Channel
Turn On Delay Time 21 ns
Power Dissipation 250W
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2010
Packaging Cut Tape (CT)
Physical
Supplier Device Package PQFN (5x6) Single Die
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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