IRLBA1304
RoHS
/
Package TO-273AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 185A SUPER-220
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-273AA
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1999
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 185A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 95A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 740A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 1160 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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