Pulsed Drain Current-Max (IDM) 620A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 78A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 150A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 78A Tc
Input Capacitance (Ciss) (Max) @ Vds 5110pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Rds On (Max) @ Id, Vgs 3.2m Ω @ 40A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 140W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ