IRL8113
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 105A TO-220AB
PDF
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Buying Options
Total Price: USD $0.82
Unit Price: USD $0.8227
≥1 USD $0.8227
≥10 USD $0.67545
≥100 USD $0.6536
≥500 USD $0.6327
≥1000 USD $0.6118
Inventory: 19008
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 220 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 420A
Drain-source On Resistance-Max 0.006Ohm
Drain Current-Max (Abs) (ID) 42A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 105A Tc
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 15V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Rds On (Max) @ Id, Vgs 6m Ω @ 21A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 110W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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