IRL7833STRLPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 150A D2PAK
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Buying Options
Total Price: USD $1.9
Unit Price: USD $1.9008
≥1 USD $1.9008
≥10 USD $1.57784
≥100 USD $1.255672
Inventory: 551
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 3.8MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4170pF @ 15V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Rise Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.9 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 150A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 600A
Dimensions
Height 4.826mm
Length 10.668mm
Width 9.65mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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