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RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 150A TO-262
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 150A
Turn-Off Delay Time 21 ns
Fall Time (Typ) 6.9 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 50ns
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Input Capacitance (Ciss) (Max) @ Vds 4170pF @ 15V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Rds On (Max) @ Id, Vgs 3.8m Ω @ 38A, 10V
FET Type N-Channel
Turn On Delay Time 18 ns
Power Dissipation 140W
Power Dissipation-Max 140W Tc
Number of Elements 1
Current Rating 150A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 30V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole

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