Pulsed Drain Current-Max (IDM) 120A
Continuous Drain Current (ID) 36A
Gate Charge (Qg) (Max) @ Vgs 74nC @ 5V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 44m Ω @ 18A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.8W
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)