IRL3502PBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 110A TO-220AB
PDF
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Buying Options
Total Price: USD $1.33
Unit Price: USD $1.32715
≥1 USD $1.32715
≥10 USD $1.08965
≥100 USD $1.05545
≥500 USD $1.02125
≥1000 USD $0.98705
Inventory: 1148
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 110A
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7mOhm @ 64A, 7V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V
Rise Time 140ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 7V
Vgs (Max) ±10V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 20V
Input Capacitance 4.7nF
Drain to Source Resistance 8mOhm
Rds On Max 7 mΩ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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