IRL3502
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 110A TO-220AB
PDF
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Buying Options
Total Price: USD $1.33
Unit Price: USD $1.32715
≥1 USD $1.32715
≥10 USD $1.08965
≥100 USD $1.05545
≥500 USD $1.02125
≥1000 USD $0.98705
Inventory: 6006
Minimum: 1
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Technical Details
Technical
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 64A, 7V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 7V
Vgs (Max) ±10V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 110A
Drain-source On Resistance-Max 0.007Ohm
DS Breakdown Voltage-Min 20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series HEXFET?
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status Non-RoHS Compliant
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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