Drain to Source Resistance 23mOhm
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 39A
Turn-Off Delay Time 41 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 7V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V
Vgs(th) (Max) @ Id 700mV @ 250μA
Rds On (Max) @ Id, Vgs 20mOhm @ 23A, 7V
Element Configuration Single
Power Dissipation-Max 57W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ