IRL3103STRRPBF
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 64A D2PAK
PDF
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Buying Options
Total Price: USD $20.58
Unit Price: USD $20.5846
≥1 USD $20.5846
≥10 USD $16.89005
≥100 USD $16.3628
≥500 USD $15.8346
≥1000 USD $15.3064
Inventory: 1116
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 94W Tc
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 8.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Rise Time 120ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 9.1 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.65nF
Drain to Source Resistance 16mOhm
Rds On Max 12 mΩ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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