IRL3103SPBF
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 64A D2PAK
PDF
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Buying Options
Total Price: USD $5.34
Unit Price: USD $5.3447
≥1 USD $5.3447
≥10 USD $4.38615
≥100 USD $4.2484
≥500 USD $4.1116
≥1000 USD $3.9748
Inventory: 1152
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 9.65mm
Length 10.668mm
Height 4.826mm
Technical
Nominal Vgs 1 V
Dual Supply Voltage 30V
Pulsed Drain Current-Max (IDM) 220A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 16V
Threshold Voltage 1V
Continuous Drain Current (ID) 64A
Turn-Off Delay Time 14 ns
Fall Time (Typ) 9.1 ns
Vgs (Max) ±16V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 120ns
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 12m Ω @ 34A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 8.9 ns
Case Connection DRAIN
Power Dissipation 110W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 94W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Current Rating 64A
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 30V
Resistance 12MOhm
ECCN Code EAR99
Termination SMD/SMT
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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