IRL2910STRRPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,Power;N-Ch;VDSS 100V;RDS(ON) 0.026Ohm;ID 55A;D2Pak;PD 200W;VGS +/-16V
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Buying Options
Total Price: USD $4.56
Unit Price: USD $4.56475
≥1 USD $4.56475
≥10 USD $3.7449
≥100 USD $3.62805
≥500 USD $3.5112
≥1000 USD $3.39435
Inventory: 1168
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Technical
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drain Current-Max (Abs) (ID) 55A
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 190A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 520 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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