Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 5V
Current - Continuous Drain (Id) @ 25°C 104A Tc
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 54A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.8W Ta 200W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Avalanche Energy Rating (Eas) 500 mJ
Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 104A
Turn-Off Delay Time 43 ns