Avalanche Energy Rating (Eas) 290 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 400A
Drain-source On Resistance-Max 0.007Ohm
Drain Current-Max (Abs) (ID) 75A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 116A Tc
Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 7m Ω @ 60A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.8W Ta 180W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ