IRL1404LPBF
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 160A TO-262
PDF
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Buying Options
Total Price: USD $6.65
Unit Price: USD $6.65475
≥1 USD $6.65475
≥10 USD $5.45965
≥100 USD $5.2896
≥500 USD $5.1186
≥1000 USD $4.94855
Inventory: 1158
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 160A
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 200W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 95A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Rise Time 270ns
Drive Voltage (Max Rds On,Min Rds On) 4.3V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 640A
Avalanche Energy Rating (Eas) 520 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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