Drain to Source Resistance 12mOhm
Input Capacitance 3.445nF
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 104A
Turn-Off Delay Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 104A Tc
Input Capacitance (Ciss) (Max) @ Vds 3445pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V
Element Configuration Single
Power Dissipation-Max 2.4W Ta 167W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ