IRL1004LPBF
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 130A TO-262
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Dimensions
Height 10.54mm
Technical
Rds On Max 6.5 mΩ
Drain to Source Resistance 9mOhm
Input Capacitance 5.33nF
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 130A
Turn-Off Delay Time 25 ns
Vgs (Max) ±16V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 40V
Rise Time 210ns
Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Input Capacitance (Ciss) (Max) @ Vds 5330pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 6.5mOhm @ 78A, 10V
FET Type N-Channel
Turn On Delay Time 16 ns
Power Dissipation 150W
Power Dissipation-Max 3.8W Ta 200W Tc
Number of Elements 1
Current Rating 130A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 40V
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-262
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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