Time@Peak Reflow Temperature-Max (s) 30
Power Dissipation-Max 3.8W Ta 130W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 25V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 34 ns
Reverse Recovery Time 100 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ