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RoHS
RoHS RoHS compliant
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 51A TO-262
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Total Price: USD $0.93
Unit Price: USD $0.9328
≥1 USD $0.9328
Inventory: 1169
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Width 4.826mm
Length 10.6426mm
Height 4.83mm

Technical

Avalanche Energy Rating (Eas) 86 mJ
Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 51A
Turn-Off Delay Time 33 ns
Fall Time (Typ) 41 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 68 ns
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 13.9m Ω @ 31A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 14 ns
Case Connection DRAIN
Power Dissipation 80W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 80W Tc
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 51A
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 55V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Resistance 13.9MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 12 Weeks

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