Drain to Source Breakdown Voltage -30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5.8A
Turn-Off Delay Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.8A Ta
Input Capacitance (Ciss) (Max) @ Vds 595pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Rds On (Max) @ Id, Vgs 40m Ω @ 5.8A, 10V
Transistor Application SWITCHING
Turn On Delay Time 4.6 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ