IRFSL7540PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 120A TO262
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Buying Options
Total Price: USD $2.19
Unit Price: USD $2.188604
≥1 USD $2.188604
≥200 USD $0.846821
≥500 USD $0.817937
≥1000 USD $0.803495
Inventory: 1130
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Weight 2.084002g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series HEXFET?, StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.1m Ω @ 65A, 10V
Vgs(th) (Max) @ Id 3.7V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4555pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 76ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Alternative Model
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